METHOD OF FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: The method improves the reliability of a semiconductor device by enabling the simplification and stabilization of process. CONSTITUTION: The method is to etch a polycrystalline silicon layer(50)/WN(W2N)(40) film and a dielectric film simultaneously with in-situ method using ECR(electron cyclotron resonance) plasma source in the etching process of a ground electrode having a polysilicon/WN(W2N) double structure and using a Ta2O5(30) as the dielectric film.