FINE CONTACT HOLE FORMING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A fine contact hole forming the method of a semiconductor device is provided to easily form the fine contact hole by increasing a process spare degree by preventing a damage of an electrode and a short between electrodes. CONSTITUTION: The fine contact hole forming method of a semiconductor device comprises the steps of: evaporating an electric conduction material for a gate electrode formation on a semiconductor substrate; forming the gate electrode by patterning the upper part of the electric conduction material for the gate electrode; evaporating in order an oxide film and a nitride film for stopping etching on the upper part of the whole structure; forming a nitride film spacer on both side walls of a pattern after etching the nitride film for stopping etching; evaporating an insulation oxide film in a certain thickness; opening the upper part of a multi crystal silicon for a hard disk; forming a contact hole; forming a contact plug inside the contact.