MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

PURPOSE: A manufacturing method for a semiconductor element is provided to secure a margin of a gate electrode and a conductive layer for preventing contacting each other and for improving a reliability of a processing yield rate and a device movement. CONSTITUTION: A manufacturing method for a semiconductor element comprises: forming successively a gate insulating film(14), a first conductive layer for a gate electrode, and a mask insulating film(18) on the upper part of a semiconductor substrate(12); forming a photo sensitive film pattern(20) on the upper unit of the mask insulating film; forming a mask insulating film pattern by etching process; eliminating the photo sensitive pattern; forming a first insulating film(22) spacer on the both side walls of the mask insulating film pattern; forming the gate electrode by etching the first conductive layer; forming a second insulating film(24) spacer on the both side walls of the first insulating film spacer and the gate electrode; forming a source/drain area in the semiconductor substrate on the both sides of the gate electrode; and forming a second conductive layer on the upper part of the structure.