THIN FILM TRANSISTOR MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A thin film transistor manufacturing method of a semiconductor device is provided to prevent the residue from remaining on the side wall of a gate when etching the conducting film for a channel. CONSTITUTION: The thin film transistor manufacturing method comprises the steps of: forming a bulk transistor on a silicon substrate(10), such as an access transistor, a driving transistor and the like; evaporating an interlayer insulating film(12) and forming a node contact hole by selectively etching the interlayer insulating film(12); forming a polysilicon film(13) to form a TFT gate(13a) on the upper area of the whole structure; and patterning the TFT gate(13a) and the node contact(13b) by selectively etching the polysilicon film(13).