CONDUCTOR PLUG FORMING METHOD FOR WIRING MULTI-LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A conductor plug forming method for wiring multi-layer of a semiconductor device is provided to improve the device efficiency by minimizing the defect of burying tungsten or the adhesive strength between the attaching membrane and the conductor. CONSTITUTION: A conductor plug comprises the steps of: forming an opening so the upper face of wired layer of the lower part surrounded by an insulating layer between layers as to be opened; forming an attaching membrane on the insulating layer between layers having the opening; attaching the 1st conductor on the attaching membrane in a thickness as 50¯60% as the conductor to fill the opening up; etching the 1st conductor and the attaching membrane(104); forming a wall metal membrane(108) on the insulating membrane between layers.