发明名称 |
CONTACT CREATING METHOD OF SEMICONDUCTOR EQUIPMENT |
摘要 |
PURPOSE: A contact creating method of a semiconductor equipment is provided to increase the contact resistance of a storage electrode and decrease the process cost. CONSTITUTION: The contact creating method of a semiconductor equipment comprises the steps of: forming a conductive film pad(104) that is electrically connected with a semiconductor substrate(100) and an insulating layer(106) on the semiconductor substrate; forming a contact hole(108) by etching the insulating layer until a part of the surface layer(107) of the conductive film pad; doping the surface layer of the pad; and forming a contact electrode(109) by filling the contact hole with the conductive layer.
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申请公布号 |
KR20000002332(A) |
申请公布日期 |
2000.01.15 |
申请号 |
KR19980023014 |
申请日期 |
1998.06.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
LEE, SEE WOO |
分类号 |
H01L21/28;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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