SEPARATION STRUCTURE FORMING OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A separation structure forming method of a semiconductor device is provided not to expose the angular part of a substrate at an upper side of a trench structure. CONSTITUTION: A partition structure forming method of a semiconductor device comprises the steps of: trench area installing by putting the nitrogen ion onto the polycrystalline silicon after attaching the oxide(2,4) and the polycrystalline silicon(3) onto a substrate(1) sequentially, exposing a section of the substrate by forming a pattern on the polycrystalline silicon and the oxide; trench structure forming to form a trench structure by dry typed etching of the exposed substrate including attaching of the oxide to form a partition structure by attaching the oxide inside the trench structure; and forming oxidized lamina(5) to form the oxidized lamina on the side of the bottom area of the trench structure and the polycrystalline silicon after forming the trench structure.