发明名称 CHEMICAL MECHANICAL POLISHING MACHINE
摘要 PURPOSE: A chemical mechanical polishing machine is provided to improve a polishing uniformity of a wafer by forming a predetermined groove, passing through a retainer ring and formed at a surface of the retainer ring, so as to effectively supply a slurry. CONSTITUTION: The chemical mechanical polishing machine comprises a polishing head(2) which is comprised of a wafer chuck(22) for supporting a wafer at a chemical mechanical polishing process; a retainer ring(36) surrounding the chuck, for preventing a separation of the wafer when the wafer is polished; a polishing housing(28) for forcing a polishing pressure and for supporting the chuck and the retainer ring, wherein a plurality of grooves are formed at a surface of the retainer ring, the respective grooves having predetermined width and depth, spaced from each other and passing through the retainer ring.
申请公布号 KR20000001503(A) 申请公布日期 2000.01.15
申请号 KR19980021802 申请日期 1998.06.11
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KO, YONG RIM
分类号 H01L21/304;(IPC1-7):H01L21/304 主分类号 H01L21/304
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