| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with an electrode where fine and granular semiconductors are uniformly formed on its surface at a low cost. SOLUTION: A gate electrode 103, a source electrode formed of an N-type diffused layer 104, and a drain electrode formed of an N-type diffused layer 105 are formed on a P-type silicon substrate 100 for the formation of a MOSFET, a columnar capacitor is composed of a second lower electrode 108, a dielectric film 110, and an upper electrode 111, where granular silicon germanium semiconductors are provided to the second lower electrode 108 for enlarging the capacitor in electrostatic capacity in a semiconductor memory device. The second lower electrode 108 of a polycrystalline silicon film is formed on the surface of a first lower electrode 107, and when silicon germanium is deposited on the surface of the second lower electrode 108, granular silicon germanium bodies 109 are formed by crystal grain boundaries present on the surface of the second lower electrode 108.
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