发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent disconnection at a connection hole even if the connection hole deviates from an upper-layer wiring layer by allowing a resist to remain on the surface of the upper-layer wiring layer with a specific thickness when performing ashing elimination of the resist. SOLUTION: In the case of ashing elimination of a resist 17, the resist 17 is allowed to remain on the surface of an upper-layer wiring layer 16 by a specific thickness. Therefore, the surface of the upper-layer wiring layer 16 cannot be exposed to the oxygen plasma directly, thus preventing an oxide layer from being formed on the surface of the upper-layer wiring layer 16. Therefore, when performing a wet treatment by eliminating the resist 17 or the like, an electric charge accumulated on the upper-layer wiring layer 16 is discharged into an amine family organic release liquid without being suppressed by the oxide layer and hence reducing the potential of tungsten 15. Therefore, even if the upper-layer wiring layer 16 deviates and the tungsten 15 in a connection hole 13 is partially exposed due to miniaturization, the tungsten 15 cannot elute while being accelerated due to the electrochemical reaction, thus preventing disconnection at the connection hole 13 and reducing wiring resistance.
申请公布号 JP2000012682(A) 申请公布日期 2000.01.14
申请号 JP19980171473 申请日期 1998.06.18
申请人 MITSUBISHI ELECTRIC CORP 发明人 MORIMOTO NOBORU;TAKADA YOSHIFUMI;YAMASHITA YUKIHIRO;SUGANO ITARU
分类号 H01L23/522;H01L21/768;(IPC1-7):H01L21/768 主分类号 H01L23/522
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