发明名称 |
HALFTONE TYPE PHASE SHIFT MASK, BLANK FOR HALFTONE TYPE PHASE SHIFT MASK, AND PRODUCTION OF HALFTONE TYPE PHASE SHIFT MASK |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a halftone type phase shift mask capable of having good optical characteristics to both exposure light ArF (wavelength = 193 nm) of a short wavelength and inspection light (wavelength = 365 nm) of a relatively long wavelength. SOLUTION: The transparent base material 2 of the halftone type phase shift mask constituted by laminating a semi-transparent phase shift film 3a of a prescribed pattern shape on the transparent base material 2 is formed of calcium fluoride as an essential component. This translucent phase shift film 3a is formed to include a zirconium silicide. The reflectivity to the exposure light of the short wavelength may be decreased and the transmittance to the inspection light of the relatively long wavelength may be decreased.</p> |
申请公布号 |
JP2000010255(A) |
申请公布日期 |
2000.01.14 |
申请号 |
JP19980173631 |
申请日期 |
1998.06.19 |
申请人 |
TOPPAN PRINTING CO LTD |
发明人 |
OKUBO KINJI |
分类号 |
G03F1/32;G03F1/68;H01L21/027;(IPC1-7):G03F1/08 |
主分类号 |
G03F1/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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