| 摘要 |
PROBLEM TO BE SOLVED: To reduce threshold current, to stabilize output and to improve reliability of a ridge wave guiding semiconductor laser device. SOLUTION: A first cladding layer 3, an active layer 5, a second cladding layer 7a and a third cladding layer in ridge form are formed in sequence to form a ridge wave guiding semiconductor laser device. A low-resistance region of high carrier density which is formed in a conductor type different from that of the first cladding layer 3 is formed in the second cladding layer 7a of low carrier density and under the third cladding layer.
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