发明名称 COMPOUND MATERIAL FOR SUBSTRATE OF SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a compound material for the substrate of a semiconductor device that maintains high heat conduction and low thermal expansion characteristics, and prevents deformation, damage, and deterioration of thermal characteristics due to thermal history. SOLUTION: In a compound material 3, a fiber 1 made of carbon and/or graphite fiber where a fiber length is set to 1,000μor less and an aspect ratio is set to 100 or less is randomly aligned in a two-dimensional direction with a volume fill rate of 20-60% in a metal matrix 2, where molybdenum, tungsten, or their mixture is added to copper or copper alloy with a volume rate of 15-50% for the metal matrix.</p>
申请公布号 JP2000012739(A) 申请公布日期 2000.01.14
申请号 JP19980195021 申请日期 1998.06.25
申请人 FURUKAWA ELECTRIC CO LTD:THE 发明人 OKADA TAKAHIRO;SAKATA MASATO
分类号 B22D19/14;C22C9/00;C22C49/00;H01L23/14;H01L23/373;H05K1/05;(IPC1-7):H01L23/14 主分类号 B22D19/14
代理机构 代理人
主权项
地址