| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device having a high integration density without causing increase of the number of its manufacturing steps. SOLUTION: Resist 4 is formed on an interlayer insulating film 3 formed on a semiconductor substrate 1, and the resist is subjected to a light exposure with use of a mask of half-tone or the like to form a resist pattern having different film thicknesses depending on locations. Next, the interlayer film 3 is etched with the resist pattern masked to thereby make a groove 5 and a contact hole 6 in a wiring layer having different depths in an identical step. The resist pattern may be formed by laminating resist layers having different sensitivities and exposing the layers with light. |
