| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method which can detect an end of etching operation without causing charging damage, a cleaning method which can detect an end of cleaning operation, a plasma processing apparatus which can detect the end point of the etching or cleaning operation, and a matching circuit which can be suitably used for detecting the end point in the both methods. SOLUTION: In the etching method, while a predetermined gas is introduced into a vacuum container 1 from a gas supply device 2 and the container is vacuumized by a pump 3 to cause the container to keep a predetermined pressure therein, a high frequency power is supplied from a high frequency power source 4 to a dome-shaped spiral coil 6 provided above a dielectric window 5, to generate a plasma within the container and to perform etching operation over a substrate 8 on a substrate electrode 7. At this time, a high frequency power is supplied from a high frequency power source 10 for the substrate electrode via a matching circuit 9 to the substrate electrode 7 and a voltage monitoring conductor 11. Thus, by controlling an ion energy reaching the substrate 8 and simultaneously by monitoring a self bias generated in the voltage monitoring conductor, an end of the etching operation can be detected. |
