| 摘要 |
PROBLEM TO BE SOLVED: To improve reproducibility and reliability. SOLUTION: A compound semiconductor device is provided with an oxidized region, which is obtained by oxidizing a part or the whole of a layer to be oxidized. A method for manufacturing such a semiconductor device includes a step of laminating for forming a layer to be oxidized as superlattice layer comprising a first layer formed of composition whose speed of oxidation is high, and a second layer of composition whose speed of oxidation is lower than the first layer, and an oxidation step for oxidizing the layer to be oxidized to transform a part or the whole of the layer to be oxidized into an oxidized area.
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