| 摘要 |
PROBLEM TO BE SOLVED: To provide an ohmic electrode of superior heat resistance for III-V group nitride base compound semiconductor, and formation thereof. SOLUTION: This ohmic electrode 3 is formed on an n-type layer 2 made of III-V group nitride compound semiconductor and comprises Al layer 3a, Ti layer 3b, and Au layer 3c laminated in this order. With such a constitution, the thickness of the Al layer 3a does not exceed 200 nm while this ohmic electrode 3 made of Al layer, Ti layer and Au layer laminated in this order on the n-type layer 2 is formed by subjecting it to heat treatment at 400-700 deg.C for 3 minutes to 250 hours in a nitrogen atmosphere.
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