| 摘要 |
PROBLEM TO BE SOLVED: To obtain a method for manufacturing a polycrystalline silicon interlayer insulating film, which can be applied to nonvolatile semiconductor storage devices and has few electron traps. SOLUTION: In a method for manufacturing a semiconductor device, having a nonvolatile storage element in which diffused layers which become source and drain are formed in a semiconductor substrate and a floating gate electrode is formed on the substrate through an insulating film, and then a control gate electrode is formed on the floating gate electrode through an insulating film, a silicon film 104 which becomes the floating gate electrode is formed and a silicon oxide film is formed by a reduced-pressure chemical vapor growth method using dichlorosilane as a source gas. After working the film 104 to a desired shape and heat-treated in an ammonia atmosphere immediately after the formation, a silicon film 107 which becomes the control gate electrode is formed. Therefore, the charge holding characteristic of the nonvolatile semiconductor storage device is improved after rewriting memory cells.
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