| 摘要 |
PROBLEM TO BE SOLVED: To decrease effectively a leakage current flowing in a parasitic transistor and form a semiconductor device which forms a horizontal type bipolar transistor having a high current amplification factor by a method, wherein a second semiconductor element adjacent to a first semiconductor element is formed in a common step to a first semiconductor element. SOLUTION: For example, boron is ion-implanted to a collector region 127c of a L-PNP transistor as a P-type impurity, whereby a collector layer is formed up to a position deeper than an emitter layer 139d. Accordingly, it is possible to decrease the leakage current flowing in a parasitic PNP transistor reaching a P+ embedded layer of an element isolated insulating film lower layer, or a P-type silicon substrate 101 via a base region of an n-type epitaxial layer from an emitter diffused layer 139d. Thus, the use efficiency of an emitter current is improved, and it becomes possible to increase a current amplifying factor (hFE) of the L-PNP transistor.
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