| 摘要 |
PROBLEM TO BE SOLVED: To planarize a hetero-interface and improve high frequency characteristics and high output characteristics by providing an InGaAs or GaAs thin layer between a channel layer and a buffer layer at a specified distance from the channel layer. SOLUTION: A wafer used for manufacturing a double-hetero-structure high mobility transistor is constituted by laminating a super-lattice buffer layer 2, buffer layers 3, 4, an n-InGaAs interface control layer 5, a second electron feed layer 6, a second space layer 7, an i-InGaAs channel layer 8, a first spacer layer 9, a first electron feed layer 10, a Schottky layer 11, and a contact layer 12 on a substrate 1 wherein the distance between the n-InGaAs interface control layer 5 and i-InGaAs channel layer 8 is 50 nm or less, pref. 10 nm or less, and an interface control layer 5 is provided at a desired position according to the element design and may use a GaAs layer.
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