| 摘要 |
PROBLEM TO BE SOLVED: To provide a method by which a semiconductor device in which the resistance values of the base, collector, and source/drain of a BiCMOS are reduced can be manufactured through simplified manufacturing processes. SOLUTION: A method for manufacturing a semiconductor device includes a step of forming an n+ gate electrode (first semiconductor layer) 19, a step of forming an insulating film 26, and a step of forming a second semiconductor layer 34. The method also includes a step of forming sidewalls 28 on both sides of the gate electrode 19, by leaving the second semiconductor layer 34 and the bipolar section of the insulating film 26 and removing a CMOS portion, a step of forming source and drain regions 29 and 30, a step of forming a Ti layer on the entire surface and forming the silicified surfaces 32 of the second semiconductor layer 34, source and drain regions 29 and 30, and the gate electrode 19, and a step of forming a base electrode by patterning the second semiconductor layer 34.
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