| 摘要 |
PROBLEM TO BE SOLVED: To form a three-dimensional shape precisely on an Si substrate without an increase in manufacturing cost. SOLUTION: In this manufacturing method, A heat oxidation film serving as an etching mask is formed for an Si substrate having <100> crystal orientation. The heat oxidation film is formed at a temperature causing almost no defect of oxygen condensation in the Si substrate, for example, at 104 deg.C or less, preferably between 840 and 1000 deg.C. Specifically, an oxidation temperature T and an oxidation time (t) are set so as to satisfy T<=0.0012 t2-0.9884t+1042.2 (below a curve of the figure). The heat oxidation film is formed in such a condition so as to suppress the growth of oxygen condensation in the Si substrate to a degree that no problem occurs in an actual processing, thereby precisely forming a three-dimensional shape by an anisotropic etching using KOH.
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