发明名称 EL ELEMENT
摘要 PROBLEM TO BE SOLVED: To prevent the occurrence of a short circuit of electrodes in the EL element, and to improve productivity and a yield ratio, by eliminating the need for a little damage process of low-temperature as a vacuum film forming method of a metal reflective layer. SOLUTION: A metal reflective layer 22 is formed on an opposite substrate 23 set opposite to and spatially separated from metal cathodes 20 on an organic EL layer 19. The metal reflective layer 22 compensates non-reflective portions between the cathodes 20 to realize a uniform reflective surface. Here, the metal reflective layer 22 is not formed on the organic EL layer 19 and the cathodes 20, therefore it does not have adverse effects on them.
申请公布号 JP2000012235(A) 申请公布日期 2000.01.14
申请号 JP19980192488 申请日期 1998.06.23
申请人 CASIO COMPUT CO LTD 发明人 SHIRASAKI TOMOYUKI;ARAI KAZUYOSHI
分类号 H05B33/24;H01L27/32;H05B33/12;H05B33/22;(IPC1-7):H05B33/24 主分类号 H05B33/24
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