发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent a defective capacitor from occurring due to an electrical discharge that occurs through a dielectric film. SOLUTION: An upper electrode 114 is formed above a semiconductor board 104, a wiring 14 electrically connected to the lower electrode of a capacitor 108 is formed, and a first and a second pad 16 and 18 connected to the wiring 14 at different points are formed. Thereafter, a wafer test is carried out in a final manufacturing process, where wafer probes are put on the first and second pad 16 and 18 to be energized apply a voltage between them, whereby the wiring 14 is fused. Therefore, even if the capacitor 108 is charged up in a manufacturing process, electric charge is discharged from the capacitor 108 through the wiring 14 at once, so that a defective capacitor which occurs due to an electric discharge that takes place through a dielectric film included in the capacitor 108 can be avoided, and a manufacturing yield can be restrained from decreasing.
申请公布号 JP2000012776(A) 申请公布日期 2000.01.14
申请号 JP19980174301 申请日期 1998.06.22
申请人 NEC CORP 发明人 KAMATA MINORU
分类号 H01L27/04;H01L21/822;(IPC1-7):H01L27/04 主分类号 H01L27/04
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