| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser having a 1.3-μm band light emitting region which can be formed, even on a GaAs substrate by providing a GaAsSb quantum well layer in an active region. SOLUTION: In an active layer 401, a plurality of GaAsSb quantum well layers 405 is provided between lower and upper optical waveguide layers 402 and 403, and barrier layers 404 are respectively provided on both sides of the quantum well layers 405. The GaAsSb quantum well layers 405 can be provided in the active layer 401, when a quantum well structure containing the layers 405 is provided at least in part or throughout the active region 1. At providing the quantum well structure, it is desirable to provide barrier layers composed of a material having a band gap larger than that of GaAs on both sides of the GaAsSb quantum well layers 405, in the quantum well structure containing the layers 405. |
