| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method capable of carrying out exact inspection even when the pattern formed on a mask of a system to correct a proximity effect by making the size of the pattern different from a design value is inspected for good or not. SOLUTION: There is an extremely large pattern part 5 in a part of a pattern part 4 of the ordinary size. Pattern formation is so executed that the proximity effect at the time of transfer by an electron beam may be corrected at the large pattern part 5, and as a result, the actual pattern 2 is made thinner than the pattern 1 complying with the design value. When, therefore, the inspection of the pattern is carried out by comparing the design size of the pattern and the actually measured pattern detected from the actual pattern edge position, this portion is detected as a defect. The portion, however, is a direction where the pattern is made finer in the direction of correcting the proximity effect and coincides with the direction of the actual pattern 2 and, therefore, the decision of this portion as the defect is averted.</p> |
