| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor, that maintains a wafer waiting for washing treatment after ending etching treatment in a vacuum state as much as possible, minimizes time when the wafer is in an atmospheric pressure state, and can suppress the occurrence of after corrosion on the wafer that stands by in a waiting chamber. SOLUTION: Remaining time T2 in a washing treatment is measured in advance according to the time T1 for purging a wafer by atmospheric pressure in a waiting chamber 13 and time required for washing the wafer in a washing chamber 12, and the wafer where etching treatment is completed in a vacuum chamber 11 is allowed to stand by in the chamber 13 before being carried to the washing chamber 12. At that time, the chamber 13 is maintained in a vacuum state, and the state of the chamber 13 is changed to an atmospheric- pressure state at timing when the atmospheric-pressure purge time T1 nearly coincides with remaining time T2. |
