| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable AlGaInP semiconductor laser element by forming a current non-injecting structure near the end face of the element, with a simple manufacturing process. SOLUTION: A semiconductor laser element incorporates at least a first conductivity-type clad layer 130, an active layer 110, and second conductivity- type clad layers 120 and 150 and is provided with a double heterostructure formed on a first conductivity-type semiconductor substrate 210, a ridge stripe which is formed of the second conductivity-type clad layer 150 and extended in the direction of a resonator, a first current blocking layer 250 which covers the side faces and top face of the ridge stripe, so that the stripe width of at least one light emitting section of the resonator becomes narrower than the stripe width in the resonator, and a second current blocking layer 190 which buries both sides of the ridge stripe. The first current block layer 250 is made of an AlInP layer. Consequently, a highly reliable AlGaInP semiconductor laser element can be realized.
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