| 摘要 |
PROBLEM TO BE SOLVED: To conveniently manufacture a semiconductor device by making a silicide layer on gate electrodes thicker than that on source and drain electrodes. SOLUTION: An insulation film and gate electrodes 1 are formed on an Si substrate patterned like islands, source-drain electrodes 2, 3 are formed into which then an impurity is introduced at a low concn., an SiO2 film 4 is formed and etched, leaving the SiO2 film 4 near the side faces of the gate electrodes 1, high-concn. ions are introduced with the left SiO2 film 4 used as a mask to activate it, thereby completing the source-drain electrodes 2, 3, and Co grains 5 to be metal grains are flied at an angleθto deposit the Co grains 5 thicker than the source-drain electrodes 2, 3 on the gate electrodes 1, thereby forming a metal silicide layer 7.
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