发明名称 SEALING FORMATION METHOD OF SEMICONDUCTOR
摘要 <p>PROBLEM TO BE SOLVED: To provide a method for performing the sealing formation of a semiconductor that can prevent the bending failures of a wire from occurring. SOLUTION: A semiconductor device is manufactured by sealing a semiconductor element 1 and a wire 3 for connection with a thermoplastic resin composition. The thermoplastic resin composition containing a PPS resin and an inorganic filler is used, the surrounding of a wire 3 is sealed by a thermoplastic resin composition with a low melting viscosity containing 80-99 wt.% PPS resin, and then the outside is sealed by the thermoplastic resin composition that has a melting viscosity higher than the resin composition and contains 30-70 wt.% PPS resin. The surrounding of the wire 3 can be sealed with the thermoplastic resin composition with a high content of PPS resin, a low melting viscosity, and satisfactory flow behavior, thus preventing a sweeping phenomenon for pushing the wire 3 to flow from occurring easily.</p>
申请公布号 JP2000012746(A) 申请公布日期 2000.01.14
申请号 JP19980178338 申请日期 1998.06.25
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 HASHIMOTO YOICHI;OHIRA TSUTOMU
分类号 C08K3/00;C08L81/02;H01L21/56;H01L23/29;H01L23/31;(IPC1-7):H01L23/29 主分类号 C08K3/00
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