发明名称 METHOD AND APPARATUS FOR MEASURING THICKNESS OF THIN FILM, AND METHOD AND APPARATUS FOR MANUFACTURING THIN FILM DEVICE USING THE SAME
摘要 PROBLEM TO BE SOLVED: To make the thickness of a transparent film and the film thickness distribution accurately measurable by frequency and phase-analyzing a spectral distribution waveform of a reflected light from a thin film and calculating an absolute value of the thickness from the relationship between a frequency and a phase component and the thickness. SOLUTION: A white light from a light source 41 is passed through a pinhole 42 and a beam splitter 45, converted into parallel beams via a lens 46, then passed through an iris diaphragm 47, and is incident to a film to be measured on a surface of a wafer 48. A reflected light of the wafer 48 is passed through the diaphragm 47 and the lens 46, altered at its optical path via the splitter 45, and is incident to a diffraction grating 44. The light spectrally separated by the grating 44 is focused on a detector 43, and hence a spectral intensity distribution 37 can be obtained. This reflected light is interfered via the film to be measured and is provided with a spectral intensity distribution corresponding to a structure in the film. This distribution is corrected and frequency analyzed by a processor 49, and hence its thickness is calculated.
申请公布号 JP2000009437(A) 申请公布日期 2000.01.14
申请号 JP19980299311 申请日期 1998.10.21
申请人 HITACHI LTD 发明人 HIROSE TAKESHI;NOGUCHI MINORU;NINOMIYA TAKANORI;KENBO YUKIO;MAEDA SHUNJI;TSUCHIYAMA YOJI
分类号 B24B49/12;B24B37/013;G01B11/06;H01L21/00;H01L21/304;H01L21/66 主分类号 B24B49/12
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