| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor of low cost which is excellent in temperature characteristics, and its manufacturing method. SOLUTION: A silicon oxide film 5 and a silicon nitride film 6 are formed on the surface of a silicon substrate 1, the films 5 and 6 and the substrate 1 in a region where a diaphragm 8 is to be formed are eliminated by etching, and the diaphragm 8 is formed. After the silicon nitride film 6 and the silicon oxide film 5 which are left on the silicon substrate 1 are eliminated, a silicon oxide film 9 is formed on only the diaphragm 8 part of the silicon substrate 1. By epitaxially growing silicon, polycrystalline silicon 12 is grown in the part where the silicon oxide film 9 is formed. Only the surface of single crystal silicon 11 is masked, and polycrystalline silicon 12 is selectively eliminated.
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