| 摘要 |
PROBLEM TO BE SOLVED: To reduce particle generated when a wafer is carried in and carried out by keeping the temperature of a wall part of a chamber at fixed temperature or higher by preventing the temperature from lowering so that an excessive product sticking to an inner wall of a chamber does not peel when a wafer heater is turned off. SOLUTION: After a desired semiconductor film is formed in a wafer 5, a wafer heater 8 is turned off to lower the temperature of the wafer 5. Meanwhile, a chamber wall heater 12 is turned on for holding a wall part of a chamber 2a at a wafer carrying-out temperature or higher and a wafer carrier 5 is carried out from a reaction chamber 2 to a pre-chamber 10. The chamber wall heater 12 is turned on while the wafer heater 8 is on to prevent a wall part of the chamber 2a from lowering to wafer carrying-in and carrying-out temperature or lower, and a film formation flow is repeated while a wafer is carried in and carried out. It is preferable to set wafer carrying-in and carrying-out temperature at 80 to 300 deg.C for reducing particle generated from an inner wall of the chamber 2a.
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