| 摘要 |
PROBLEM TO BE SOLVED: To increase charge transfer speed and to allow a transfer electrode to be formed by a thinner film, by forming the transfer electrode made of SiGe in a charge-transfer device. SOLUTION: A CCD solid-state image pickup device 11 is constituted by an image pickup area 14 and a horizontal transfer registor, in the case of an interline transistor(IT). The image pickup area 14 consists of a plurality of light-receiving sections 12, which are disposed in a matrix form and perform a photoelectric conversion, and a plurality of vertical transfer transistors 13, each having a CCD structure corresponding to each column of the light-receiving sections. The horizontal transfer registor transfers signal charge, which is transferred from the vertical transfer transistor 13, to an output section. Transfer electrodes, specifically, transfer electrodes 18A, 18B, and 18C of the vertical transfer registor 13 and a transfer electrode of the horizontal transfer registor are made of Sii-xGex (0<x<1). Preferably, the transfer electrodes 18A, 18B, and 18C and the transfer electrode of the horizontal transfer registor are made of an n-type (n+) polycrystalline Sii-xGex.
|
