| 摘要 |
PROBLEM TO BE SOLVED: To reduce the power consumption of a semiconductor storage provided with a negative potential generation circuit for generating a potential for setting the reset potential of a word line to negative potential. SOLUTION: A semiconductor storage is provided with a plurality of word lines arranged in parallel, a plurality of bit line that are extended vertically in a direction where the word lines are extended, a memory cell array 1 that is arranged in an array and where a plurality of memory cells being connected to a plurality of word lines and a plurality of bit lines are arranged, and a word line reset level generation circuit 4 for generating negative potential, where the output of the word line reset level generation circuit is applied to a non-selected word line to set the non-selected word line to negative potential. In the semiconductor storage, the word line reset level generation circuit 4 can vary the amount of supply, and changes the amount of supply of negative potential according to the operation of the memory cell array.
|
