| 摘要 |
PROBLEM TO BE SOLVED: To form a semiconductor device and a transistor which maintain a drain breakdown voltage, while reducing the on-resistance by a method wherein the basic structure of a transverse structural transistor is maintained, while an effective width of a drift layer is increased. SOLUTION: Layers in a structure of n-type and p-type semiconductor layers 5, 4 are increased, and n-type connecting regions 6, 7 and a p-type connecting region 8 are provided on both side faces, and the regions 6, 7 are connected to an ohmic electrode 9 and wirings 11, 12, and further an ohmic electrode 10 and a wiring 13 are similarly provided in the region 8, and a bias voltage is supplied to the p-type layer 4 via the wiring 13. Then, since the relation between potentials V11 and V12 of the respective wirings 11, 12, is made to operate as a drift region between the gate and drain of the transistor, and when 11 is set on a gate side and 12 is set on a drain side, the relation V11<V12 results. Thus, it is possible to realize simultaneously three characteristics such as a high breakdown voltage, a low drain resistance and a low parasitic capacity, which are necessary for a high breakdown voltage transistor but which were opposite to each other. |
