| 摘要 |
PROBLEM TO BE SOLVED: To prevent residues from remaining in the pattern upper parts of a positive type photoresist at the time of development. SOLUTION: This process for producing semiconductor devices includes a stage for forming the positive type photoresist 2 on a substrate 1, a patterning exposure stage for forming desired easily soluble resist patterns 2a by selective exposure of the pattern forming regions of the positive type photoresist 2, a stage for exposing the surface of the positive type photoresist 2 not exposed in the patterning exposure stage and changing the surface layer part to an easily soluble resist layer 2b for residue prevention and a stage for forming the desired patterns 6 on the positive type photoresist 2 by removing the easily soluble resist patterns 2b and the easily soluble resist layer 2a with a developer. |
