| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a bipolar transistor which can reduce degradation of breakdown voltage or leakage between an emitter and a base without increasing base-to-collector capacitance. SOLUTION: In the manufacturing method, a first epitaxial growth layer 14 is formed in an upper surface of an SDG region 13 of a semiconductor substrate 1 wherein an isolation structure is formed by a first insulation film 12. Then, after a third insulation layer which is larger than a region of the first epitaxial growth layer 14 is formed in an upper surface of the first epitaxial growth layer 14, a second epitaxial growth layer 17 is formed in a region which is wider than a third insulation layer from a side surface of the first epitaxial growth layer 14. Thereafter, a first polysilicon layer 18, a fourth insulation layer 19 and a fifth insulation layer 20 are formed all over the semiconductor substrate 1, an opening 21 is provided to a region which is almost the same as the SDG region 13, and an emitter electrode layer 25, an emitter layer 23, etc., are formed inside the opening 21. A semiconductor device A is obtained in this way. |
