| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor element, which can make a recovery from the damages to the crystal of a polycrystalline semiconductor layer, which is generated by a collision of ions in an impurity doping process, and also can make compensation for uncombined species. SOLUTION: A polycrystalline semiconductor layer 10 is heated, immediately after ions are implanted in the layer 10 or an energy beam or an infrared lamp is radiated on the layer 10, whereby the recovery from the damages to the crystallizability of the layer 10 are made and moreover, by continuously performing heating of the temperature lower than 350 deg.C to the layer 10 in a hydrogen gas atmosphere, the recovery from the damages to the crystallizability of the layer 10 and a compensation of uncombied species can be made.
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