| 摘要 |
PROBLEM TO BE SOLVED: To prevent etch residue by selectively implanting ions into regions of a film which is directly above the lower sides of steps covered with this film prior to etching and then etching the film. SOLUTION: Damage steps 24a of a polysilicon film 24 is subjected to ion implantation, the crystal structure of the steps 24a is damaged, resulting in a slightly brittle structure and hence high-etching rate parts 24b. Then the etching is made with a resist pattern 26 used as a mask, rapidly advanced at the high-etching rate parts 24b and ends earlier at the steps 24a easy to produce etch residue. When the overall etching ends, no etch residue is generated, a second layer polysilicon electrode 27 can be satisfactorily formed, and thereby the nonconformities caused by electrode short-circuits, etc., ascribed to the etch residue can be prevented.
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