| 摘要 |
PROBLEM TO BE SOLVED: To reduce the resistance in the ridge section of a semiconductor laser device, so that the drive voltage of an element is be lowered by restricting the thickness of the ridge to a minimum thickness required for constricting current and forming the clad layer required for eliminating the effects of a cap layer on the lateral mode of light on the ridge. SOLUTION: After a current constricting layer (ridge) having the minimum thickness required for constricting current is formed, the clad layer required for eliminating the effects of a cap layer on the longitudinal mode of light is formed on the ridge. The clad layer formed on the ridge is made to have a larger cross section than the ridge has. The clad layer formed on the ridge can be formed, in such a way that after the ridge is formed by etching, the ridge is buried under a semiconductor current blocking layer having conductivity opposite to that of the ridge, and then the clad layer is regrown or the current constricting layer and clad layer are collectively grown in the opening of a mask, such as the insulating film, etc.
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