PLASMA CVD SYSTEM, AND SOLAR CELLS AND PLASMA CVD METHOD MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To form a high quality amorphous silicon thin film on a large area substrate by quickly removing a higher-order silane gas, etc., generated during film deposition from a reaction region and forming the film under the same conditions at any positions on the surface of the substrate on which a film is formed. SOLUTION: A substrate 22 is placed in a reaction chamber where a vacuum is maintained. A material gas is supplied in a space, in front of the surface of the substrate 22 on which a film is formed, and a plasma is generated by performing discharge excitation using high-frequency power. An amorphous silicon thin film is formed on the substrate 22 by chemical vapor deposition. Furthermore, in the space in front of the substrate 22 is provided an electrode part, consisting of tubular electrodes 21a and 21c for supplying a material gas through a plurality of gas discharge ports and tubular electrode 21b and 21d for sucking and exhausting the gas to the outside through a plurality of gas suction ports.