| 摘要 |
PROBLEM TO BE SOLVED: To realize good bond of electron beam and field by calculating storage energy per small region of an exposure pattern based on storage energy per division region of a sample and measuring a size of an arbitrary part based on storage energy whereto a position of two or more small regions is changed and added. SOLUTION: At first, after a sample formed of resist and a silicon board is divided into mesh three-dimensionally, energy stored in each mesh in resist is calculated. Then, storage energy to each mesh is calculated based on a beam profile obtained by dividing CP patterns 6, 12 extracted from an exposure pattern corresponding to mesh. A resist profile is obtained based on storage energy whereto a shift amount 13 of the CP pattern 6 and the CP pattern 12 is added while being changed. A width of a resist pattern is measured based on it. As a result, a range of an allowable shift amount to an irradiation amount is obtained as exposure margin. |
