发明名称 ANISOTROPIC ETCHING METHOD AND APPARATUS THEREOF
摘要 PROBLEM TO BE SOLVED: To prevent changing the compsn. of an anisotropic etching liq. due to evaporation, by always supplementing evaporation components of this etching liq. evaporated from its surface during anisotropic etching in matching with the evaporation rate. SOLUTION: A supplementary nozzle 12 is coupled with a side plate 11a at an inclination angleθ, allowing a supplement liq. to calmly flow down to the liq. surface from an evaporation component supplementary unit 14 via a supplement nozzle 12 along a tank inside face of the side plate 11a, resulting the surface of an anisotropic etching liq. hardly producing ripples and micropyramids on the wafer etching surface owing to the ripples being suppressed from growth, and the evaporation component supplementary unit 14 continuously supplements evaporation components by small amounts during the anisotropic etching. As a result, it is possible to suppress the temp. drop in the anisotropic etching liq. during supplementing and the concn. change for stabilizing the anisotropic etching.
申请公布号 JP2000012511(A) 申请公布日期 2000.01.14
申请号 JP19980178630 申请日期 1998.06.25
申请人 MITSUBISHI MATERIALS SILICON CORP 发明人 OI HIROYUKI
分类号 H01L21/306;(IPC1-7):H01L21/306 主分类号 H01L21/306
代理机构 代理人
主权项
地址