| 摘要 |
A method for detecting a positional deviation of a contact hole formed in an interlayer insulator layer includes the steps of forming a detection conductor pattern on a substrate at a peripheral portion of a contact hole formation area in which a contact hole is to be formed, and forming a first insulating layer to cover the detection conductor pattern. Then, a first conducting layer of a predetermined pattern is formed on the first insulating layer to cover the contact hole formation area, and a second insulating layer is formed to cover the first conducting layer. Furthermore, a contact hole is formed at the contact hole formation area in the second insulating layer, and a second conducting layer is deposited on the second insulation layer so that the second conducting layer is deposited within the contact hole. Thereafter, a short-circuit between the detection conductor pattern and one of the first and second conducting layers is detected. When the short-circuit is detected, it is judged that the formed contact hole adversely deviates from a proper position where the contact hole is to be formed. |
