发明名称 |
Medium to high frequency PECVD process for functional layer deposition on a moving substrate |
摘要 |
A PECVD process, for functional layer deposition on a moving substrate, uses a tunnel-shaped magnetic field (11) to increase the plasma density above the substrate (4). A medium frequency (1-500 kHz) or high frequency (500 kHz to a few MHz) PECVD process, for functional layer deposition on the front face of a moving substrate acting as counter-electrode to a plate electrode, employs one or more tunnel-shaped magnetic fields (11) passing through the substrate (4) to produce an increased plasma density over the substrate. An Independent claim is also included for an apparatus for carrying out the above process, including a magnet system (6) positioned below the back face (9) of the substrate.
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申请公布号 |
DE19830402(A1) |
申请公布日期 |
2000.01.13 |
申请号 |
DE19981030402 |
申请日期 |
1998.07.08 |
申请人 |
VON ARDENNE ANLAGENTECHNIK GMBH |
发明人 |
SCHULZE, DIETMAR;DIMER, MARTIN;STUEMPFEL, JOHANNES;HECHT, HANS-CHRISTIAN;GEHM, KLAUS;REHN, STANLEY |
分类号 |
C23C16/509;H01J37/32;(IPC1-7):C23C16/44;H01J37/34;C23C16/54 |
主分类号 |
C23C16/509 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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