Embedded DRAM, used in a microprocessor or digital signal processor

摘要

An embedded DRAM production process comprises selective hydrogen treatment of a high melting metal oxide layer to form a conductive portion for a contact connection and leave a dielectric portion for a DRAM capacitor. An embedded DRAM production process comprises: (a) providing a substrate having a memory circuit region with transfer FETs and a logic circuit region with logic FETs; (b) applying and structuring a first insulating layer to form first and second source/drain region exposure openings above the memory circuit region and third conductive region exposure openings above the logic circuit region; (c) applying a first conductive layer which does not completely fill the openings; (d) applying a high melting metal oxide layer; (e) applying a masking layer which covers the first openings but not the second and third openings; (f) treating with hydrogen to convert the exposed metal oxide into electrically conductive material; (g) removing the mask; and (h) applying and structuring a second conductive layer such that a first electrode, a dielectric layer and a lower electrode are formed above each first opening and contact connections are formed above the second and third openings. Preferred Features: The high melting metal oxide is TiO2, Ta2O5, Fe2O3 or BaTiO3.