发明名称 |
Carbon film is sputter deposited in a nitrogen-containing gas and then vacuum heat treated |
摘要 |
A carbon film is produced by sputter deposition in a nitrogen-containing sputtering gas mixture, followed by vacuum heat treatment. A carbon film is produced on a substrate by sputter deposition from a carbon target in a sputtering gas mixture containing /-20% nitrogen, followed by heat treatment at above 100 deg C under high vacuum. An Independent claim is also included for a substrate with a carbon film produced by the above process. Preferred Features: The carbon film may have a structure of perpendicular fibers and/or tubes of 1-30 nm diameter.
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申请公布号 |
DE19930133(A1) |
申请公布日期 |
2000.01.13 |
申请号 |
DE19991030133 |
申请日期 |
1999.06.30 |
申请人 |
IMS IONEN MIKROFABRIKATIONS SYSTEME GES.M.B.H., WIEN;UNIVERSITAET GESAMTHOCHSCHULE KASSEL;USTAV POCITACOVYCH SYSTEMOV,SLOVENSKA ADADEMIA VLED |
发明人 |
HRKUT, PAVOL;HUDEK, PETER;RANGELOW, I. W.;LOESCHNER, HANS |
分类号 |
C23C14/34;C23C14/06;C23C14/35;C23C14/58;(IPC1-7):C23C14/06 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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