发明名称 Carbon film is sputter deposited in a nitrogen-containing gas and then vacuum heat treated
摘要 A carbon film is produced by sputter deposition in a nitrogen-containing sputtering gas mixture, followed by vacuum heat treatment. A carbon film is produced on a substrate by sputter deposition from a carbon target in a sputtering gas mixture containing /-20% nitrogen, followed by heat treatment at above 100 deg C under high vacuum. An Independent claim is also included for a substrate with a carbon film produced by the above process. Preferred Features: The carbon film may have a structure of perpendicular fibers and/or tubes of 1-30 nm diameter.
申请公布号 DE19930133(A1) 申请公布日期 2000.01.13
申请号 DE19991030133 申请日期 1999.06.30
申请人 IMS IONEN MIKROFABRIKATIONS SYSTEME GES.M.B.H., WIEN;UNIVERSITAET GESAMTHOCHSCHULE KASSEL;USTAV POCITACOVYCH SYSTEMOV,SLOVENSKA ADADEMIA VLED 发明人 HRKUT, PAVOL;HUDEK, PETER;RANGELOW, I. W.;LOESCHNER, HANS
分类号 C23C14/34;C23C14/06;C23C14/35;C23C14/58;(IPC1-7):C23C14/06 主分类号 C23C14/34
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