METHOD FOR CRYSTALLISING A SEMICONDUCTOR MATERIAL AND CRYSTALLISING SYSTEM

摘要

The invention concerns a method for crystallising a semiconductor material layer (1) using an energy beam (F1) illuminating on one surface (L x l) the semiconductor material layer (1). The layer is crystallised by the relative movement of the beam at the layer surface along a specific direction (OX). The beam has an energy profile along the displacement direction (OX) such that there is at least a first energy level for obtaining coarse grain crystal lisation (Super Lateral Grow-SLG) from a small grain amorphous or crystalline phase with of the semiconductor material and one or several second energy levels higher than the first energy level and located towards the front of the zone illuminated by the beam along the beam displacement direction (OX). Said second energy level(s) enable to melt/dissolve a material comprising both coarse grain and small grain crystalline phases. The invention is useful for producing coarse grain crystalline semiconductor material layers.