SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURE THEREOF, CIRCUIT BOARD, AND ELECTRONIC DEVICE
摘要
<p>A method of manufacturing a semiconductor device comprises a first step of providing an anisotropic conductive material (16) between one surface (18) of a substrate (12) where a wiring pattern (10) is formed and one surface (24) of a semiconductor element (20) where electrodes (22) are formed; and a second step of applying pressure between the semiconductor element (20) and the substrate (12) so that the wiring pattern (10) and electrode (22) can be connected electrically and that the anisotropic conductive material (16) can extend to at least part of the sides (28) of the semiconductor element (20).</p>